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              QW-BE003 RATING AND CHARACTERISTIC CURVES (CEFB101-G thru CEFB105-G) Percent of Rated Peak Reverse Voltage (%) 150 120 90 60 30 0 Fig.1 Reverse Characteristics 0.01 0.1 1 10 100 R e v e r e u r r n ( μ ) s C e t A Forward Voltage (V) 0.001 0 Fig.2 Forward Characteristics o w r d C r r e n ( A ) F r a u t 0.01 0.1 1 10 0.8 Reverse Voltage (V) 0.01 Fig.3 Junction Capacitance 0 J n t i n a p a c i a n c e ( p ) u c o C t F 5 15 30 35 0.1 1 10 100 Number of Cycles at 60Hz Fig.4 Non-repetitive Forward Surge Current 0 P e a k F o r w a r d S u r g e C u r r e n t A ) ( 20 30 50 Comchip Technology CO., LTD. Page 2 REV:A =125 OC TJ =75 OC TJ =25 OC TJ 0.4 1.2 2.0 1.6 CEFB101-G~103-G CEFB104-G CEFB105-G =25 OC TJ Pulse width 300μS 4% duty cycle 10 20 25 CEFB101-G~103-G CEFB104-G~105-G =25 OC TJ f=1MHz and applied 4VDC reverse voltage 1 10 100 10 40 =25 OC TJ 8.3ms single half sine wave, JEDEC method Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics 50Ω NONINDUCTIVE 10Ω NONINDUCTIVE (+) 25Vdc (approx.) (-) D.U.T. 1Ω NON- INDUCTIVE OSCILLLISCOPE (NOTE 1) PULSE GENERATOR (NOTE 2) (+) (-) NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF. 2. Rise time=10ns max., input impedance=50 Ω. trr Set time base for 50 / 10nS / cm 1cm -1.0A -0.25A 0 +0.5A Fig.6 Current Derating Curve O C) Ambient Temperature ( A v e r a g e F o r w a r d C u r r e n t ( A ) 0 50 25 75 100 150 125 175 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 Single phase Half wave 60Hz SMD Efficient Fast Recovery Rectifiers |